Navitas Semiconductor's U.S.-Made GaNFast Wafers Set for September Shipment

Navitas Semiconductor is advancing its Gen 5 GaNFast platform for production at GlobalFoundries' 200mm GaN-on-silicon facility in Burlington, Vermont. The milestone marks the first U.S.-made Gen 5 GaNFast wafers shipping in September through GlobalFoundries.

The manufacturing plan expands domestic capacity for advanced gallium nitride power devices used in high-efficiency electrical systems. It also gives Navitas a U.S.-based production source for future GaNFast generations.

The first product family will include 650-volt GaN FETs across several on-resistance specifications for different power requirements, targeting power systems that require different balances between efficiency, switching performance, size, and thermal control.